The COPRA Plasma Source solutions are customizable for different forms of both plasma etching with reactive gases as also Ion Milling/Sputter Etching applications on wafer sizes of up to 12 Inch. Due to the unique COPRA specific high ion current density the use of reactive gases at lowest ion energy inputs avoiding defects is enabling extraordinary control of your etching requirements.
COPRA Physical Plasma Etching Sources / Applications
Controlled Reactive Ion Etching with Chlorine/Fluorine Gases with low Ion Energy input at low and high vacuum pressures.
Reactive Ion Etching with Oxygen Gas (Ashing) for photoresist removal with low Ion Energy input at low and high vacuum pressures
Ion Milling / Sputter Etching or COPRA Physical Etching Plasma Sources are used for Ion Bombardment at low and high vacuum pressures