COPRA DN501-GRPE Round Plasma Sources

OverviewDN160-CF-GMDN201-X-GRDN201-X-GMDN250-CF-GRPEDN251-ISO-K-EGRPEDN401-GRPEDN501-GRPEDN-custom design

The COPRA DN501-GRPE Round Plasma Source is a flange mounted RF-ICP source solutions for wafer sized substrates of up to 12". As smaller COPRA DN401-GRPE the COPRA DN501-GRPE Round Plasma Source series enable highly competitive etching and oxidation/nitridation processes and can be used with any type of gas. These sources are nowadays enabling benchmarking post oxidation/nitridation of metallized films. They are customizable to be used in reactive etching processes requiring damage preventing low ion energy inputs paired with excellent ion current densities. These COPRA DN501-GRPE Round Plasma Source solutions handle tight semiconductor specific requirements. 

Main Applications

Ø 380 mm
neutral Plasma Beam (no filament)
Integrated Remote Match
Ø 300 mm (12" Wafer)
CCR Flange
13,56 MHz
5 kW
2x10-4 to 1x10-2 mbar
2x flex tube 6 mm
VCR 1/4
45 kg